CN

GaAs-PD

The fiber collimator is mainly used to collimate the light output from the fiber into parallel light. It is suitable for the wavelength 350~1600nm and CO2 laser, and the collimated spot is 2.8~9mm.

PN Detector Material Active Area Spectral Response Peak Wavelength Responsivity-Peak Rise Time Dark Current Shunt Resistance Package Capacitance Package Style Pin Qty. Window Private Operating Temperature NEP Max. Reverse Voltage
EPC-740-0.5 AlGaAs/GaAs 0.17mm2 680 … 770 nm 740 nm 0.5A/W@0V 15/30 ns@-5V 40 pA@-5V Ω - 40 pF@0V Chip Filter chip -40 … +125℃ W/√Hz 5V@10μA
EPC-740-0.9 AlGaAs/GaAs 0.62mm2 680 … 770 nm 740 nm 0.5A/W@0V 15/30 ns@-5V 40 pA@-5V Ω - 40 pF@0V Chip Filter chip -40 … +125℃ W/√Hz 5V@10μA
EPC-880-0.5 AlGaAs/GaAs 0.17mm2 820 … 935 nm 890 nm 0.25A/W@0V 15/30 ns@-5V 1 nA@-1V Ω - F Chip Filter chip -40 … +125℃ W/√Hz V
EPC-880-0.9-1 AlGaAs/GaAs 0.72mm2 820 … 935 nm 890 nm 0.25A/W@0V s 1 nA@-1V Ω - F Chip Filter chip -40 … +125℃ W/√Hz 5V@10μA
EPC-880-1.4 AlGaAs/GaAs 1.79mm2 820 … 935 nm 890 nm 0.27A/W@0V 200 ns@-1V 1 nA@-1V Ω - F Chip Filter chip -40 … +125℃ W/√Hz 5V@10μA
EPC-880-1.4(*) -----------------
EPC-880-2.5 -----------------
EPD-740-12-0.X -----------------
EPD-880-5-0.5 -----------------
EPD-880-2-0.9 -----------------
EPD-880-12-0.9 -----------------
EPD-880-0-0.5 -----------------
EPD-880-0-1.4 -----------------
EPD-660-5-0.9 AlGaAs/GaAs 0.62mm2 605 … 705 nm 660 nm 0.42A/W@0V 40 ns@-1V 40 pA@-1V 600 GΩ@-10mV Φ5 Plastic THD 50 pF@0V Special 2 Filter -20 … +85℃ W/√Hz 5V@10μA
EPD-880-0.9-2 -----------------
EPC-660-0.5 AlGaAs/GaAs 0.17mm2 620 … 700 nm 660 nm 0.2A/W@0V 15/30 ns@-1V 40 pA@-1V Ω - 40 pF@0V Chip Filter chip -40 … +125℃ W/√Hz V
EPC-660-0.9 AlGaAs/GaAs 0.62mm2 620 … 700 nm 660 nm 0.2A/W@0V 40 ns@-1V 40 pA@-1V Ω - 40 pF@0V Chip Filter chip -40 … +125℃ W/√Hz V
EPC-660-0.9(*) -----------------
EPC-660-1.4-1 -----------------
EPD-660-3-0.5 AlGaAs/GaAs 0.17mm2 605 … 705 nm 660 nm 0.42A/W@0V 15/30 ns@-1V 40 pA@-1V 670 GΩ@-10mV Φ3 Plastic THD 50 pF@0V Special 2 Filter chip -40 … +125℃ 8.5 fW/√Hz@660nm V
EPD-660-12-0.9 -----------------
EPD-660-1-0.9 AlGaAs/GaAs 0.62mm2 620 … 700 nm 660 nm 0.42A/W@0V 40 ns@-1V 40 pA@-1V 400 GΩ@-10mV - 50 pF@0V SMD - SMD 1206 -20 … +85℃ W/√Hz 10V@10μA
EPD-880-1-0.9 -----------------
EPD-660-5/0.5 -----------------
ULMPIN-10-TT-N0104U GaAs ?70 μm 840 … 860 nm - 0.6A/W - 0.02A - - 0.29 pF Chip - - Chip -40 … +85℃ - -
ULMPIN-10-TT-N0112U GaAs ?70 μm 840 … 860 nm - 0.6A/W - 0.02A - - 0.29 pF Chip - - Chip -40 … +85℃ - -
ULMPIN-04-TN-U0104U GaAs 100 μm 830 … 860m - 0.5A/W 90 ps <3 nA - - 0.4 pF Chip - - Chip -20 … +85℃ - -
ULMPIN-04-TN-U0112U GaAs 100 μm 830 … 860m - 0.5A/W 90 ps <3 nA - - 0.4 pF Chip - - Chip -20 … +85℃ - -
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