CN

Standard

The NIR-enhanced Si-APD arrays we provide are mainly for MEMS and FLASH lidars, which can improve the system resolution while maintaining the performance of a single APD, effectively reducing interference. And there are a number of pixel sizes, arrangement and different packages to choose from, so that customers can choose the most suitable array solution before the final customization.
Application: MEMS/FLASH lidar.

PN Active Area Dark Current Bandwidth Temperature Coefficient - Vbr Max. Reverse Voltage Package Package Style Pin Qty. Window
IAG080S5 ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA TO-46 TO 2 -
IAG080S6 ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA TO-46 TO 3 -
IAG080S6L ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA TO-46 TO 3 -
IAG080S7 ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA TO-46 TO 2 -
IAG080T6 ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA TO-37 TO 6 -
IAG080T8 ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA TO-8 TO 6 -
IAG080Y1 ?80 μm 3 nA@M=10 2.5 GHz@M=10 0.075V/K@10μA 66V@10μA Ceramic Submount Special 0 -
IAG080S5(*) ---------
IAE080S6 ?80 μm 3 nA@M=10 1000 MHz@M=10 0.1V/K 40 … 80V TO-46 TO 3 -
IAE200S5 ?80 μm 10 nA@M=10 400 MHz@M=10 0.1V/K 40 … 80V TO-46 TO 2 -
IAE200S6 ?80 μm 10 nA@M=10 400 MHz@M=10 0.1V/K 40 … 80V TO-46 TO 3 -
IAG200S6 200 μm 25 nA@M=10 1000 MHz@M=10 0.075V/K@10μA 60V@10μA TO-46 TO 3 -
IAG200S7 200 μm 25 nA@M=10 1000 MHz@M=10 0.075V/K@10μA 60V@10μA TO-46 TO 2 -
IAG200S7(*) ---------
IAG200S7[WITH SILICON WINDOW] 200 μm 25 nA@M=10 1000 MHz@M=10 0.075V/K@10μA 60V@10μA TO-46 TO 2 -
IAG350S6 350 μm 50 nA@M=10 600 MHz@M=10 0.075V/K@10μA 55V@10μA TO-46 TO 3 -
IAG350S7 350 μm 50 nA@M=10 600 MHz@M=10 0.075V/K@10μA 55V@10μA TO-46 TO 2 -
IAG200T8 ?200 μm 25 nA@M=10 1.0 GHz@M=10 0.075V/K@10μA 60V@10μA TO-8 TO 6 -
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